RAM
DDR5
DDR4
DDR3
DDR2
CPU
GPU
DISK
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
Sobre el sitio
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Seleccionar RAM 1
Seleccionar RAM 2
Compara
DDR2 Lista de RAM
Todos los módulos de memoria, ordenados por latencia creciente
№
Ancho de banda
Latencia, ns
Velocidad de lectura, GB/s
Velocidad de escritura, GB/s
№
21
RAM
Kingston 99U5316-059.A00LF 2GB
Latency
39
Read speed
6,703.8
Write speed
2,674.6
№
22
RAM
Micron Technology 8HTF6464AY-667B8 512MB
Latency
39
Read speed
3,897.7
Write speed
1,953.6
№
23
RAM
Micron Technology ZION 800-2GB-A132- 2GB
Latency
39
Read speed
5,768.3
Write speed
2,238.3
№
24
RAM
Micron Technology 8HTF6464AY-53EB9 512MB
Latency
40
Read speed
3,873.3
Write speed
1,956.2
№
25
RAM
Muscle Power MP-2GB8500CL5S 2GB
Latency
40
Read speed
6,660.2
Write speed
2,947.4
№
26
RAM
Mushkin 991523 (996523) 1GB
Latency
40
Read speed
6,540.0
Write speed
2,050.5
№
27
RAM
Kingston 9905316-176.A00LF 2GB
Latency
40
Read speed
6,425.9
Write speed
2,651.8
№
28
RAM
Kingston NT2GT64U8U8U8U8U8U 2GB
Latency
40
Read speed
5,644.1
Write speed
2,579.9
№
29
RAM
Kingmax Semiconductor KLEE88F-B8KS6 2GB
Latency
40
Read speed
5,460.1
Write speed
2,027.5
№
30
RAM
Corsair CM2X1024-5400C4PRO 1GB
Latency
40
Read speed
5,547.2
Write speed
2,400.5
№
31
RAM
G Skill Intl F2-7200CL4-2GBPI-B 2GB
Latency
40
Read speed
6,547.7
Write speed
2,931.5
№
32
RAM
Walton Chaintech AU2G732-1G6H005 2GB
Latency
40
Read speed
6,398.5
Write speed
2,941.5
№
33
RAM
OCZ OCZ2B10662G 2GB
Latency
40
Read speed
6,410.7
Write speed
2,761.5
№
34
RAM
Samsung M3 78T2953BZ0-CD5 1GB
Latency
40
Read speed
4,676.2
Write speed
2,235.2
№
35
RAM
Samsung M3 78T6453FZ0-CD5 512MB
Latency
41
Read speed
4,164.0
Write speed
2,220.9
№
36
RAM
Samsung M3 78T6453FZ0-CCC 512MB
Latency
41
Read speed
4,401.4
Write speed
1,893.5
№
37
RAM
Samsung M3 78T6453FG0-CD5 512MB
Latency
41
Read speed
3,391.9
Write speed
1,987.6
№
38
RAM
OCZ OCZ2RPX10002G 2GB
Latency
41
Read speed
6,171.6
Write speed
2,609.1
№
39
RAM
OCZ OCZ28001024ELGE 1GB
Latency
41
Read speed
4,335.0
Write speed
2,206.3
№
40
RAM
OCZ OCZ2RPR11502G 2GB
Latency
41
Read speed
6,403.5
Write speed
2,773.7
«
1
2
3
4
5
6
»
Últimas comparaciones
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston LV32D4U2S8ME-16X 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Apacer Technology GD2.1527WC.001 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905702-150.A00G 8GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-3000C14-8GVR 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-3000C16-16GTRS 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-3200C14-16GFX 16GB
A-DATA Technology VDQVE1B16 2GB
Kingston HP24D4U7S8MBP-4 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX3200C18D4/8G 8GB
Kingston 9965525-140.A00LF 8GB
Kingston LV36D4U1S8HD-8XR 8GB
Samsung M393B2G70BH0-CK0 16GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
AMD AE34G1601U1 4GB
Apacer Technology 78.BAGN8.AZC0B 4GB
Samsung M393B1K70CH0-CH9 8GB
Samsung M378A5244CB0-CTD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3400C16-4GRBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4000C18-8GTZKK 8GB
Informar de un error
×
Bug description
Source link