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Samsung M378B5673EH1-CF8 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Compare
Samsung M378B5673EH1-CF8 2GB vs Nanya Technology M2X4G64CB8HG5N-DG 4GB
Overall score
Samsung M378B5673EH1-CF8 2GB
Overall score
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5673EH1-CF8 2GB
Report a bug
Below the latency in the PassMark tests, ns
28
39
Around 28% lower latency
Reasons to consider
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Report a bug
Faster reading speed, GB/s
13.7
12.7
Average value in the tests
Faster write speed, GB/s
9.7
7.5
Average value in the tests
Higher memory bandwidth, mbps
12800
8500
Around 1.51 higher bandwidth
Specifications
Complete list of technical specifications
Samsung M378B5673EH1-CF8 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
28
39
Read speed, GB/s
12.7
13.7
Write speed, GB/s
7.5
9.7
Memory bandwidth, mbps
8500
12800
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
7-7-7-20 / 1066 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
1988
2431
Samsung M378B5673EH1-CF8 2GB RAM comparisons
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Nanya Technology M2X4G64CB8HG5N-DG 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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